| PART |
Description |
Maker |
| PQ12RA11 PQ09RA1 PQ09RA11 PQ05RA1 PQ12RA1 PQ05RA11 |
OFF-STATE LOW DISSIPATION CURRENT 1A OUTPUT, LOW POWER-LOSS VOLTAGE REGULATORS
|
SHARP[Sharp Electrionic Components]
|
| AS58C1001 |
Low power dissipation, active current
|
Micross Components
|
| PQ1CZ21H2ZZ |
Low Dissipation Current at OFF-state Chopper Regulator
|
Sharp Corporation
|
| FMMT619 |
Collector current:IC=2A, power dissipation :PC=625mw
|
TY Semiconductor Co., Ltd
|
| 2SC3052 |
Collector current :IC=0.2A Power dissipation :PC=0.15W
|
TY Semiconductor Co., Ltd
|
| FMMT625 |
Collector current:IC=1A, Power dissipation :PC=625mW
|
TY Semiconductor Co., Ltd
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| BZT52C30 BZT52C9V1 BZT52C2V0 |
Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
TY Semiconductor Co., Ltd
|
| FCX717 |
2W power dissipation, Extremely low saturation voltage E.g. 12mv Typ
|
TY Semiconductor Co., Ltd
|
| FCX1151A |
2W power dissipation, Extremely low saturation voltage E.g. 60mv Typ.
|
TY Semiconductor Co., Ltd
|
